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Nanostructures d’oxyde d’indium pour les mémoires résistives RRAM intégrées en CMOS Back-End-Of-Line

Abstract : The current computer memories are nothing more than the extreme miniaturization of the technology developed in the 1960s. These memories reached technological limits that are technically difficult and very costly to overcome. Memories must therefore be reinvented by a profound change in their shape, such as the development of three-dimensional structures for example, or by the use of innovative technologies. A new physical phenomenon in the field of memories interested us during this thesis. It consists in an electrically and reversibly control of the resistivity of a structure that can reach at least two level to code the information in a durable way. These memories are called non-volatile resistive memories. A lot of research is being carried out to understand and control this technology. The main current defect of this emerging technology is its lack of reproducibility. We propose an original approach consisting in the integration of indium oxide nanoparticles into the structure of a resistive memory that is directly compatible with existing chips. The purpose of particle integration is to increase the homogeneity of these memories by controlling the electrical behaviour of the structure. The study initially focused on the challenges of memory manufacturing and in particular on the deposition of nanoparticles. To have a beneficial effect, the manufacture of these products must be perfectly controlled. The study then details the electrical characterization of the memories. We discuss about the phenomena that are at the origin of the change in resistivity in order to try to better control them.
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Submitted on : Friday, September 11, 2020 - 11:16:07 AM
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  • HAL Id : tel-02936361, version 1


Pierre-Vincent Guenery. Nanostructures d’oxyde d’indium pour les mémoires résistives RRAM intégrées en CMOS Back-End-Of-Line. Electronique. Université de Lyon, 2019. Français. ⟨NNT : 2019LYSEI114⟩. ⟨tel-02936361⟩



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