Etat de l'art de la technologie mémoire ,
, 4) Organisation des mémoires à transistor
, 5) Limites des mémoires à transistor
, Tableau comparatif des mémoires actuelles et émergentes
, 4) Conduction non filamentaire
,
, 1) Complementary Resistive Switch
, Conclusion et positionnement du projet
, II. Propriété des nanoparticules d'oxyde d'indium et conception de la cellule mémoire
, Description de l'oxyde d'indium
,
3. 2) Accumulation d'électrons en surface, Propriétés électriques des nanoparticules d'oxyde d'indium ,
, Techniques de fabrication des nanoparticules d'oxyde d'indium
, Dépôt CVD de nanoparticules d'oxyde d'indium, II. 5. Implantation ionique d'indium dans un oxyde
, Procédé de fabrication des cellules mémoires à nanoparticules d'oxyde d'indium
, 3. 2) Dépôt des nanoparticules d'oxyde d'indium par MOCVD
4. 4) Influence des paramètres de dépôts sur la croissance de nanoparticules 63 ? Influence de la température, Procédé de dépôt des nanoparticules d'oxyde d'indium ,
, Contrôle du dépôt des nanoparticules par MOCVD avec un procédé en deux étapes : 70 III. 5. 1) Problématique de nucléation des nanoparticules en continu, p.70
, 3) Croissance des nanoparticules à densité constante
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