Skip to Main content Skip to Navigation
Journal articles

High Resolution Coherent Population Trapping on a Single Hole Spin in a Semiconductor Quantum Dot

Abstract : We report high resolution coherent population trapping on a single hole spin in a semiconductor quantum dot. The absorption dip signifying the formation of a dark state exhibits an atomic physicslike dip width of just 10 MHz. We observe fluctuations in the absolute frequency of the absorption dip, evidence of very slow spin dephasing. We identify the cause of this process as charge noise by, first, demonstrating that the hole spin g factor in this configuration (in-plane magnetic field) is strongly dependent on the vertical electric field, and second, by characterizing the charge noise through its effects on the optical transition frequency. An important conclusion is that charge noise is an important hole spin dephasing process.
Document type :
Journal articles
Complete list of metadata

https://hal-univ-lyon1.archives-ouvertes.fr/hal-02310832
Contributor : Depot 4 Lyon 1 Connect in order to contact the contributor
Submitted on : Tuesday, February 16, 2021 - 1:41:59 PM
Last modification on : Wednesday, February 17, 2021 - 10:42:32 AM
Long-term archiving on: : Monday, May 17, 2021 - 7:11:35 PM

File

high_resolution_coherent_Houel...
Publisher files allowed on an open archive

Identifiers

Collections

Citation

Julien Houel, J. H. Prechtel, A. V. Kuhlmann, D. Brunner, C. E. Kuklewicz, et al.. High Resolution Coherent Population Trapping on a Single Hole Spin in a Semiconductor Quantum Dot. Physical Review Letters, American Physical Society, 2014, 112, pp.107401. ⟨10.1103/PhysRevLett.112.107401⟩. ⟨hal-02310832⟩

Share

Metrics

Record views

78

Files downloads

30