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Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil technique

Guillaume Alombert-Goget 1 Hui Li 1 J. Faria 1 S. Labor 2 D. Guignier 2 Kheirreddine Lebbou 1
1 ILM - Institut Lumière Matière [Villeurbanne]
2 RSA Le Rubis
Abstract : The distributions of Ti3+ and Ti4+ ions were evaluated by photoluminescence measurement in the wafers cut from different positions of the ingots grown by Czochralski and Verneuil techniques. Particular radial distributions of Ti4+ as function of the position in the ingot were observed in the crystals grown by Verneuil technique different than the crystals grown by Czochralski method.
Keywords : Sapphire Impurity Czochralski technique Verneuil technique
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Journal articles
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Submitted on : Thursday, October 3, 2019 - 3:51:06 PM
Last modification on : Friday, November 5, 2021 - 11:44:08 AM

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UNIV-LYON1 | CNRS | ILM | UDL

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Guillaume Alombert-Goget, Hui Li, J. Faria, S. Labor, D. Guignier, et al.. Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil technique. Optical Materials, Elsevier, 2016, 51, pp.1-4. ⟨10.1016/j.optmat.2015.11.016⟩. ⟨hal-02304935⟩

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