Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil technique

Guillaume Alombert-Goget (1) , Hui Li (1) , J. Faria (1) , S. Labor (2) , D. Guignier (2) , Kheirreddine Lebbou (1)

1 ILM - Institut Lumière Matière [Villeurbanne]
2 RSA Le Rubis

The distributions of Ti3+ and Ti4+ ions were evaluated by photoluminescence measurement in the wafers cut from different positions of the ingots grown by Czochralski and Verneuil techniques. Particular radial distributions of Ti4+ as function of the position in the ingot were observed in the crystals grown by Verneuil technique different than the crystals grown by Czochralski method.

Mots clés: Sapphire; Impurity; Czochralski technique; Verneuil technique

Domaines: Chimie; Physique [physics]; Sciences de l'ingénieur [physics]

Guillaume Alombert-Goget, Hui Li, J. Faria, S. Labor, D. Guignier, et al.. Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil technique. Optical Materials, 2016, 51, pp.1-4. ⟨10.1016/j.optmat.2015.11.016⟩. ⟨hal-02304935⟩