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Carrier-induced ferromagnetism in the insulating Mn-doped III-V semiconductor InP

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https://hal-univ-lyon1.archives-ouvertes.fr/hal-02303915
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Submitted on : Wednesday, October 2, 2019 - 4:51:11 PM
Last modification on : Friday, April 24, 2020 - 10:28:08 AM

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Richard Bouzerar, Daniel May, Ute Loew, Denis Machon, Patrice Melinon, et al.. Carrier-induced ferromagnetism in the insulating Mn-doped III-V semiconductor InP. Physical Review B: Condensed Matter and Materials Physics, American Physical Society, 2016, 94, pp.094437. ⟨10.1103/PhysRevB.94.094437⟩. ⟨hal-02303915⟩

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