Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface

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https://hal-univ-lyon1.archives-ouvertes.fr/hal-02289439
Contributor : Marie-Gabrielle Chautard <>
Submitted on : Monday, September 16, 2019 - 4:51:23 PM
Last modification on : Wednesday, October 2, 2019 - 10:36:27 AM

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T. Hubacek, A. Hospodkova, J. Oswald, K. Kuldova, J. Pangrac, et al.. Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface. JOURNAL OF CRYSTAL GROWTH, 2019, 507, pp.310-315. ⟨10.1016/j.jcrysgro.2018.11.038⟩. ⟨hal-02289439⟩

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