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Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

Alice Hospodkova Jiri Pangrac Karla Kuldova Martin Nikl Oliva Pacherova Jiri Oswald Tomas Hubacek Marketa Zikova Petr Bruza Dalibor Panek Karel Blazek Gilles Ledoux Christophe Dujardin 1 Michael Heuken Eduard Hulicius 
1 ILM - Institut Lumière Matière [Villeurbanne]
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https://hal-univ-lyon1.archives-ouvertes.fr/hal-02289060
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Submitted on : Monday, September 16, 2019 - 12:08:00 PM
Last modification on : Saturday, September 24, 2022 - 2:30:05 PM

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CNRS | UNIV-LYON1 | ILM | UDL

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Alice Hospodkova, Jiri Pangrac, Karla Kuldova, Martin Nikl, Oliva Pacherova, et al.. Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications. Fourth Conference On Sensors, Mems, and Electro-optic Systems, 2016, Skukuza, Kruger National Park, South Africa. pp.1003617, ⟨10.1117/12.2244786⟩. ⟨hal-02289060⟩

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