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Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

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https://hal-univ-lyon1.archives-ouvertes.fr/hal-02289060
Contributor : Depot 3 Lyon 1 <>
Submitted on : Monday, September 16, 2019 - 12:08:00 PM
Last modification on : Thursday, October 15, 2020 - 8:54:03 AM

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Alice Hospodkova, Jiri Pangrac, Karla Kuldova, Martin Nikl, Oliva Pacherova, et al.. Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications. Fourth Conference On Sensors, Mems, and Electro-optic Systems, 2016, Skukuza, Kruger National Park, South Africa. pp.1003617, ⟨10.1117/12.2244786⟩. ⟨hal-02289060⟩

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