Efficiency enhancement of blue light emitting diodes by eliminating V-defects from InGaN/GaN multiple quantum well structures through GaN capping layer control, Superlatt. Microstr, vol.43, pp.1-23, 2008. ,
Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes, J. Appl. Phys, vol.117, p.115705, 2015. ,
The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes, Appl. Phys. Lett, vol.103, p.141114, 2013. ,
Role of gross wellwidth fluctuations in bright, green-emitting single InGaN?GaN quantum well structures, Appl. Phys. Lett, vol.90, p.121911, 2007. ,
Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures, J. Cryst. Growth, vol.464, pp.221-225, 2017. ,
Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy, Surf. Sci, vol.604, pp.318-321, 2010. ,
Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition, J. Cryst. Growth, vol.409, pp.51-55, 2015. ,
, Ultramicroscopy, vol.74, p.131, 1998.
, Jpn. J. Appl. Phys, vol.55, issue.5S, pp.5-8, 2016.
Growth mode transition and relaxation of thin InGaN layers on GaN(0001), J. Cryst. Growth, vol.372, pp.65-72, 2013. ,
Growth and properties of InAs/In(x)Ga(1-x)As/GaAs quantum dot structures, J. Cryst. Growth, vol.310, pp.2229-2233, 2008. ,
InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study, Nanotechnology, vol.25, p.455501, 2014. ,
On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure, J. Appl. Phys, vol.121, p.214505, 2017. ,
Modeling of semiconductor nanostructures with nextnano3, Acta Phys. Pol., A, vol.110, p.111, 2006. ,
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties, J. Cryst Growth, vol.506, pp.8-13, 2019. ,