Photoluminescence polarization and piezoelectric properties of InAs/InP quantum rod-nanowires

Roman Anufriev (1) , Nicolas Chauvin (1) , Jean-Baptiste Barakat (2) , Hammadi Khmissi (3) , Khalid Naji (2) , Gilles Patriarche (4) , Xavier Letartre (5) , Michel Gendry (2) , Catherine Bru-Chevallier (1)

1 INL - S&N - INL - Spectroscopies et Nanomatériaux
2 INL - H&N - INL - Hétéroepitaxie et Nanostructures
3 Laboratoire de Micro-optoélectronique et Nanostructures [Monastir]
4 LPN - Laboratoire de photonique et de nanostructures
5 INL - Photonique - INL - Nanophotonique

Purely wurtzite InAs/InP quantum rod nanowires (QRod-NWs) emitting at 1.55 µm have been successfully grown on silicon substrates by VLS assisted molecular beam epitaxy. Microphotoluminescence studies of single QRod-NWs reveal a highly linearly polarized emission parallel to the nanowires axis. This very high degree of linear polarization (> 0.9) can be explained by the photonic nature of the NW structure. Moreover, these QRod-NWs reveal a broad peak with an asymmetric lineshape at 10K. From experimental and theoretical studies, we conclude that this feature is a consequence of a piezoelectric field induced by the strained InAs QRod.

Domaines: Micro et nanotechnologies/Microélectronique

Roman Anufriev, Nicolas Chauvin, Jean-Baptiste Barakat, Hammadi Khmissi, Khalid Naji, et al.. Photoluminescence polarization and piezoelectric properties of InAs/InP quantum rod-nanowires. CSW2014, May 2014, Montpellier, France. ⟨hal-02071832⟩