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Thickness effect on the ferroelectric properties of La-doped HfO 2 epitaxial films down to 4.5 nm

Abstract : Epitaxial La:HfO 2 films of less than 7 nm have a high remanent polarization of about 30 μC cm −2 , and show slight wake-up, endurance of at least 10 10 cycles and retention of more than 10 years, with both latter properties measured at the same poling voltage.
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https://hal.archives-ouvertes.fr/hal-03380245
Contributor : Guillaume Saint-Girons Connect in order to contact the contributor
Submitted on : Friday, October 15, 2021 - 1:35:05 PM
Last modification on : Friday, November 5, 2021 - 12:23:41 PM

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Tingfeng Song, Romain Bachelet, Guillaume Saint-Girons, Nico Dix, Ignasi Fina, et al.. Thickness effect on the ferroelectric properties of La-doped HfO 2 epitaxial films down to 4.5 nm. Journal of Materials Chemistry C, Royal Society of Chemistry, 2021, 9 (36), pp.12224-12230. ⟨10.1039/D1TC02512K⟩. ⟨hal-03380245⟩

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