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Conductive Filament Localization Within Crossbar Resistive Memories by Scanning Joule Expansion Microscopy

Abstract : Control of filament growth within conductive bridge random access memories (CBRAM) is of crucial interest in order to ensure the reliability of such emerging devices. Here, we demonstrate that scanning joule expansion microscopy (SJEM) can be used to detect and precisely localize conductive filaments within operating crossbar CBRAM devices. Flexible memory devices based on Pd/Al2O3/Ag stacks are first elaborated at low temperature on polyimide substrate. These devices show set and reset operations at low voltage (<2V) with ON/OFF ratios superior to 10 4. Under operation in the low resistance state, the SJEM amplitude images reveal a hot spot underlying the presence of a single conductive filament. An effective thermal diffusion length of 4.3µm is extracted at 50kHz and it is also demonstrated that the thermal expansion signal is proportional to the dissipated Joule power. We believe that the proposed procedure opens the way to reliability studies that can be applied to any family of memory device based on filamentary conduction.
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https://hal.archives-ouvertes.fr/hal-03344468
Contributor : Etienne Puyoo Connect in order to contact the contributor
Submitted on : Wednesday, September 15, 2021 - 9:48:27 AM
Last modification on : Thursday, September 16, 2021 - 3:43:41 AM

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Etienne Puyoo, David Albertini. Conductive Filament Localization Within Crossbar Resistive Memories by Scanning Joule Expansion Microscopy. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2020, 41 (6), pp.848-851. ⟨10.1109/LED.2020.2986543⟩. ⟨hal-03344468⟩

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