Mid-wavelength Infrared Supercontinuum Generation Spanning 1.4 Octaves in a Silicon-Germanium Waveguide
Résumé
We report mid-wavelength infrared supercontinuum generation, from 2.6 to 7.3μm, in a CMOS compatible silicon-germanium waveguide. This 1.4 octave bright supercontinuum (~7.5mW on chip generated average power) has been achieved in a low loss (<0.4dB/cm) dispersion engineered air-clad Si0.6Ge0.4/Si waveguide pumped close to the first zero-dispersion wavelength using a tunable OPA laser delivering ~200fs pulses at 4.15μm.
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