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Ni-Al ohmic contact to p-type 4H-SiC

Abstract : Investigations on Ni/Al alloys to form ohmic contacts to p-type 4H-SiC are presented in this paper. Different ratios of Ni/Al were examined. Rapid thermal annealing was performed in argon atmosphere at 400 degrees C for 1 min, followed by an annealing at 1000 degrees C for 2 min. In order to extract the specific contact resistance, TLM test structures were fabricated. A specific contact resistance of 3 x 10(-5) Omega cm(2) was obtained reproducibly on Al2+ implanted p-type layers, having a doping concentration of 1 x 10(19) cm(-3). The lowest specific contact resistance value measured amounts to 8 x 10(-6) Omega cm(2).
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  • HAL Id : hal-00141426, version 1


Heu Vang, Mihai Lazar, Pierre Brosselard, Christophe Raynaud, Pierre Cremilleu, et al.. Ni-Al ohmic contact to p-type 4H-SiC. Superlattices and Microstructures, Elsevier, 2006, 40 (4-6), pp.626-631. ⟨hal-00141426⟩



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